Paper Title:
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
229-232
DOI
10.4028/www.scientific.net/MSF.457-460.229
Citation
H. Tsuchida, I. Kamata, S. Izumi, T. Tawara, K. Izumi, "Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions ", Materials Science Forum, Vols. 457-460, pp. 229-232, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Syunsuke Izumi, Isaho Kamata, Takeshi Tawara, Hiroyuki Fujisawa, Hidekazu Tsuchida
1085
Authors: Kosuke Uchida, Toru Hiyoshi, Taro Nishiguchi, Hirofumi Yamamoto, Shinji Matsukawa, Masaki Furumai, Yasuki Mikamura
4.2 MOSFETs
Abstract:The influence of surface pit shape on 4H-SiC double implanted MOSFETs (DMOSFETs) reliability under a high temperature drain bias test has...
840
Authors: Tatsuya Masuda, Akira Miyasaka, Jun Norimatsu, Yutaka Tajima, Daisuke Muto, Kenji Momose, Hitoshi Osawa
1.2 Epitaxial and Thin Films Growth
Abstract:For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is...
201