Paper Title:
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
233-236
DOI
10.4028/www.scientific.net/MSF.457-460.233
Citation
H. K. Song, M. Y. Um, H. J. Na, D. H. Kim, I. B. Song, S. Y. Jung, J. K. Jeong, J. B. Lee, H. J. Kim, "Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor", Materials Science Forum, Vols. 457-460, pp. 233-236, 2004
Online since
June 2004
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