Paper Title:
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
245-248
DOI
10.4028/www.scientific.net/MSF.457-460.245
Citation
F. Abdoun, C. Jacquier, G. Ferro, F. Cauwet, Y. Monteil, "Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism ", Materials Science Forum, Vols. 457-460, pp. 245-248, 2004
Online since
June 2004
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