Paper Title:
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
249-252
DOI
10.4028/www.scientific.net/MSF.457-460.249
Citation
S. Y. Davydov, N.S. Savkina, A. A. Lebedev, M. Syväjärvi, R. Yakimova, "Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum", Materials Science Forum, Vols. 457-460, pp. 249-252, 2004
Online since
June 2004
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