Paper Title:
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
257-260
DOI
10.4028/www.scientific.net/MSF.457-460.257
Citation
A. Shoji, Y. Okui, T. Nishiguchi, S. Ohshima, S. Nishino, "Pendeo Epitaxial Growth of 3C-SiC on Si Substrates", Materials Science Forum, Vols. 457-460, pp. 257-260, 2004
Online since
June 2004
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