Paper Title:
Growth of SiC Films using Tetraethylsilane
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
269-272
DOI
10.4028/www.scientific.net/MSF.457-460.269
Citation
N. Kubo, T. Kawase, S. Asahina, N. Kanayama , H. Tsuda, A. Moritani, K. Kitahara, "Growth of SiC Films using Tetraethylsilane", Materials Science Forum, Vols. 457-460, pp. 269-272, 2004
Online since
June 2004
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