Paper Title:
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
273-276
DOI
10.4028/www.scientific.net/MSF.457-460.273
Citation
T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, S. Juillaguet, "Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" ", Materials Science Forum, Vols. 457-460, pp. 273-276, 2004
Online since
June 2004
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