Paper Title:
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
277-280
DOI
10.4028/www.scientific.net/MSF.457-460.277
Citation
E. Bustarret, D. Araújo, D. Méndez, F. M. Morales, F.J. Pacheco, S.I. Molina, N. Rochat, G. Ferro, Y. Monteil, "Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy", Materials Science Forum, Vols. 457-460, pp. 277-280, 2004
Online since
June 2004
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