Paper Title:
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
285-288
DOI
10.4028/www.scientific.net/MSF.457-460.285
Citation
T. Nishiguchi, Y. Mukai, M. Nakamura, K. Nishio, T. Isshiki, S. Ohshima, S. Nishino, "Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition ", Materials Science Forum, Vols. 457-460, pp. 285-288, 2004
Online since
June 2004
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