Paper Title:
Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
289-292
DOI
10.4028/www.scientific.net/MSF.457-460.289
Citation
H. Takagi, T. Nishiguchi, S. Ohta, T. Furusho, S. Ohshima, S. Nishino, "Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy", Materials Science Forum, Vols. 457-460, pp. 289-292, 2004
Online since
June 2004
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