Paper Title:
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
29-34
DOI
10.4028/www.scientific.net/MSF.457-460.29
Citation
S. I. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi, F. Hirose, H. Yamaguchi, W. Bahng, K. Arai, "High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment", Materials Science Forum, Vols. 457-460, pp. 29-34, 2004
Online since
June 2004
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