High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
29-34 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.29 |
| Citation |
Shinichi Nishizawa et al., 2004, Materials Science Forum, 457-460, 29 |
| Online since |
June, 2004 |
| Authors |
Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai |
| Keywords |
In Situ Observation, Crystal Growth, Numerical Simulation, Single Crystal, Sublimation |
| Full Paper |
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