Paper Title:
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
| Periodical | Materials Science Forum (Volumes 457 - 460) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2003 |
| Edited by | Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages | 29-34 |
| DOI | 10.4028/www.scientific.net/MSF.457-460.29 |
| Citation | Shinichi Nishizawa et al., 2004, Materials Science Forum, 457-460, 29 |
| Online since | June, 2004 |
| Authors | Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai |
| Keywords | Crystal Growth, In Situ Observation, Numerical Simulation, Single Crystal, Sublimation |
| Price | US$ 28,- |
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