Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
3-8 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.3 |
| Citation |
H. McD. Hobgood et al., 2004, Materials Science Forum, 457-460, 3 |
| Online since |
June, 2004 |
| Authors |
H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr. |
| Keywords |
Crystal, Defect, Diameter, Dislocations, Micropipe, Purity, PVT, Resistivity, Seeded Sublimation, Semi-insulating (SI), Silicon Carbide (SiC), Stress, Substrate, Wafer |
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