Paper Title:
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
305-308
DOI
10.4028/www.scientific.net/MSF.457-460.305
Citation
X. A. Fu, J. Dunning, C. A. Zorman, M. Mehregany, "Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC ", Materials Science Forum, Vols. 457-460, pp. 305-308, 2004
Online since
June 2004
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