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Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111) , p.297
Stress Control in 3C-SiC Films Grown on Si(111), p.301
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC , p.305
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows, p.309
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers , p.313
Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films, p.317
Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate , p.321
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH₃SiH₃ , p.325
Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction, p.329

Home > Materials Science Forum > Silicon Carbide and Related Materials 2003 > Investigation of Thick 3C-SiC Films Re-Grown on...

Paper Title:

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

Periodical	Materials Science Forum (Volumes 457 - 460)
Main Theme	Silicon Carbide and Related Materials 2003
Edited by	Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages	313-316
DOI	10.4028/www.scientific.net/MSF.457-460.313
Citation	Gabriel Ferro et al., 2004, Materials Science Forum, 457-460, 313
Online since	June, 2004
Authors	Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa
Keywords	3C-SiC, Epitaxy, Flash Lamp Annealing, LTPL, TEM
Price	US$ 28,-

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