Paper Title:
Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
339-342
DOI
10.4028/www.scientific.net/MSF.457-460.339
Citation
M. Weisser, C. Seitz, P. J. Wellmann, R. Hock, A. Magerl, "Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction", Materials Science Forum, Vols. 457-460, pp. 339-342, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: M.Refai Muslih, Ridwan, Iman Kuntoro, Nobuaki Minakawa
Abstract:The extinct layer of Si(311) perfect single crystal has been investigated by neutron diffraction method with the residual stress...
255
Authors: Ling Hang Wang
Abstract:The thermal expansion of a novel semiconductor material, mercury indium telluride (MIT) grown by vertical Bridgman (VB) method, was measured...
1008
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal...
28
Authors: Yasushi Urakami, Itaru Gunjishima, Satoshi Yamaguchi, Hiroyuki Kondo, Fusao Hirose, Ayumu Adachi, Shoichi Onda
Chapter 1: SiC Bulk Growth
Abstract:A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this...
9