Paper Title:
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
35-40
DOI
10.4028/www.scientific.net/MSF.457-460.35
Citation
J. R. Jenny, D.P. Malta, M.R. Calus, S. G. Müller, A. R. Powell, V. F. Tsvetkov, H. McD. Hobgood, R.C. Glass, C. H. Carter Jr., "Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices", Materials Science Forum, Vols. 457-460, pp. 35-40, 2004
Online since
June 2004
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