Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices |
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| Journal | Materials Science Forum (Volumes 457 - 460) |
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| Volume | Silicon Carbide and Related Materials 2003 |
| Edited by | Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages | 35-40 |
| DOI | 10.4028/www.scientific.net/MSF.457-460.35 |
| Online since | June, 2004 |
| Authors | Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr. |
| Keywords | 4H-SiC, DLTS, EPR, Hall-Effect, High Purity Semi Insulating, HPSI, LTPL, OAS, PVT, Resistivity, Seeded Sublimation, SIMS, Thermal Conductivity |
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