Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
35-40 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.35 |
| Citation |
Jason R. Jenny et al., 2004, Materials Science Forum, 457-460, 35 |
| Online since |
June, 2004 |
| Authors |
Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr. |
| Keywords |
4H-SiC, DLTS, EPR, Hall-Effect, High Purity Semi Insulating, HPSI, LTPL, OAS, PVT, Resistivity, Seeded Sublimation, SIMS, Thermal Conductivity (TC) |
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