Paper Title:
Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
355-358
DOI
10.4028/www.scientific.net/MSF.457-460.355
Citation
H. Idrissi, M. Lancin, G. Regula, B. Pichaud, "Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy", Materials Science Forum, Vols. 457-460, pp. 355-358, 2004
Online since
June 2004
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