Paper Title:
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
359-362
DOI
10.4028/www.scientific.net/MSF.457-460.359
Citation
M. Zhang, H. Lendenmann, P. Pirouz, "TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 359-362, 2004
Online since
June 2004
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Price
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