Paper Title:
Inelastic Stress Relaxation in Single Crystal SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
375-378
DOI
10.4028/www.scientific.net/MSF.457-460.375
Citation
R. S. Okojie, "Inelastic Stress Relaxation in Single Crystal SiC Substrates", Materials Science Forum, Vols. 457-460, pp. 375-378, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Murugesu Yoganathan, Ejiro Emorhokpor, Thomas Kerr, A. Gupta, C.D. Tanner, Ilya Zwieback
Abstract:SiC substrates produced at II-VI, Inc. have been characterized using x-ray rocking curve mapping (topography). The rocking curves have been...
729
Authors: Xiao Ming Wang, Fei Wang, Xue Zeng Zhao, Da Lei Jing
Chapter 2: Micro / Nano Materials
Abstract:The modified static bending model of microcantilever with monolayer molecules has been established based on energy method, in which the...
455
Authors: Pei Jian Zhao, Cun Long Zhou, Wei Na Li, Qing Xue Huang, Yuan Hua Shuang
Chapter 3: Materials Forming
Abstract:In the tension leveling process, calculation of the strip elongation by the traditional method only considers the extension rate after the...
813
Authors: Yun Lu, Liang Hao, Fu Sheng Pan, Mitsuji Hirohashi
Chapter 2: Materials Engineering and Production Technologies
Abstract:The relationships between curvature, electric resistance, electric power and temperature of the 1-side and 2-side electric heating actuators...
224
Authors: Yan Zhang, Wei Ke An, Yong Zhou, Jing Yin Tan
Chapter 1: Parts of Machines and Mechanisms. Design, Analysis and Simulation
Abstract:The paper aims to study the deformation and compensation of the reflector for RF-excited diffusion-cooled CO2 laser. Based on...
218