Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
387-390 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.387 |
| Citation |
Didier Chaussende et al., 2004, Materials Science Forum, 457-460, 387 |
| Online since |
June, 2004 |
| Authors |
Didier Chaussende, Patrick Chaudouët, Laurent Auvray, Michel Pons, Roland Madar |
| Keywords |
3C-SiC, Electron Backscatter Diffraction (EBSD), Nucleation |
| Full Paper |
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