Paper Title:
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
387-390
DOI
10.4028/www.scientific.net/MSF.457-460.387
Citation
D. Chaussende, P. Chaudouët, L. Auvray, M. Pons, R. Madar, "Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H ", Materials Science Forum, Vols. 457-460, pp. 387-390, 2004
Online since
June 2004
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