Paper Title:
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
403-406
DOI
10.4028/www.scientific.net/MSF.457-460.403
Citation
A. Yasushi, N. Sano, T. Kaneko, "Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum", Materials Science Forum, Vols. 457-460, pp. 403-406, 2004
Online since
June 2004
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