Paper Title:
Tailoring the SiC Subsurface Stacking by the Chemical Potential
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
415-418
DOI
10.4028/www.scientific.net/MSF.457-460.415
Citation
U. Starke, J. Bernhardt, J. Schardt, A. Seubert, K. Heinz, "Tailoring the SiC Subsurface Stacking by the Chemical Potential", Materials Science Forum, Vols. 457-460, pp. 415-418, 2004
Online since
June 2004
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