Paper Title:
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
443-448
DOI
10.4028/www.scientific.net/MSF.457-460.443
Citation
A. Gali, P. Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, I. G. Ivanov, N. T. Son, E. Janzén, W. J. Choyke, "Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 443-448, 2004
Online since
June 2004
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Price
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