Paper Title:
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
457-460
DOI
10.4028/www.scientific.net/MSF.457-460.457
Citation
F. Gao, W. J. Weber, M. Posselt, V. Belko, "Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 457-460, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Yoshino, Y. Shinzato, Masahiko Morinaga
Abstract:Formation energies of various defects in Al2O3 and SiO2 are calculated by using the plane-wave...
713
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Authors: Hui Ling Zhang, Qun Bo Fan, Fu Chi Wang, Feng Zhang
Abstract:To enhance the high-temperature stability of zirconate pyrochlore structures, one has to focus on their transformation to the disordered...
1689
Authors: A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev, Gagik A. Oganesyan, H. Ohyama
Abstract:We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subjected to thermal treatments at 1000oC and 1130oC...
123
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427