Paper Title:
EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
465-468
DOI
10.4028/www.scientific.net/MSF.457-460.465
Citation
T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, "EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 465-468, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Z. Zolnai, Nguyen Tien Son, Björn Magnusson, Christer Hallin, Erik Janzén
473
Authors: Nguyen Tien Son, T. Umeda, Junichi Isoya, Adam Gali, M. Bockstedte, Björn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
Abstract:Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the...
527
Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima
Abstract:In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for...
279
Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Takeshi Ohshima
Abstract:The Tv2a center in 4H-SiC irradiated by electrons at room temperature has been studied by pulsed EPR. Various techniques such as pulsed ELDOR...
353
Authors: Adam Gali, T. Umeda, Erik Janzén, Norio Morishita, Takeshi Ohshima, Junichi Isoya
Abstract:We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of...
361