Paper Title:
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
473-476
DOI
10.4028/www.scientific.net/MSF.457-460.473
Citation
Z. Zolnai, N. T. Son, B. Magnusson, C. Hallin, E. Janzén, "Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 473-476, 2004
Online since
June 2004
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