Paper Title:
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
477-480
DOI
10.4028/www.scientific.net/MSF.457-460.477
Citation
D. J. Meyer, N.A. Bohna, P. M. Lenahan, A. J. Lelis, "Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors", Materials Science Forum, Vols. 457-460, pp. 477-480, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Keiko Fujihira, Yoichiro Tarui, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami
Abstract:The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found...
697
Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
971
Authors: Tsunenobu Kimoto, H. Kawano, Masato Noborio, Jun Suda, Hiroyuki Matsunami
Abstract:Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures....
987
Authors: N.Y. Garces, E.R. Glaser, W.E. Carlos, Mark A. Fanton
Abstract:We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and...
389
Authors: Sarah Kay Haney, Veena Misra, Daniel J. Lichtenwalner, Anant K. Agarwal
Chapter 8: MOS Processing
Abstract:MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2 onto SiC compared to thermal...
707