Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
489-492 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.489 |
| Citation |
Mary Ellen Zvanut et al., 2004, Materials Science Forum, 457-460, 489 |
| Online since |
June, 2004 |
| Authors |
Mary Ellen Zvanut, V.V. Konovalov, W.C. Mitchel, William D. Mitchell |
| Keywords |
Doping, Electron Paramagnetic Resonance (EPR), EPR, Hall Measurement, High Purity, Point Defect, Semi-insulating (SI), Silicon Carbide (SiC) |
| Full Paper |
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