Paper Title:
The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
497-500
DOI
10.4028/www.scientific.net/MSF.457-460.497
Citation
Y. Koshka, M. S. Mazzola, "The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC ", Materials Science Forum, Vols. 457-460, pp. 497-500, 2004
Online since
June 2004
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