Paper Title:
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
509-512
DOI
10.4028/www.scientific.net/MSF.457-460.509
Citation
L. Ottaviani, E. B. Yakimov, P. Hidalgo, S. Martinuzzi, "Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma", Materials Science Forum, Vols. 457-460, pp. 509-512, 2004
Online since
June 2004
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