Paper Title:
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
521-524
DOI
10.4028/www.scientific.net/MSF.457-460.521
Citation
T. Okada, T. Kimoto, K. Yamai, H. Matsunami, F. Inoko, "Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films", Materials Science Forum, Vols. 457-460, pp. 521-524, 2004
Online since
June 2004
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Chapter I: SiC Material
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