Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
55-58 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.55 |
| Citation |
Peter J. Wellmann et al., 2004, Materials Science Forum, 457-460, 55 |
| Online since |
June, 2004 |
| Authors |
Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov |
| Keywords |
Numerical Modeling, Physical Vapor Transport, Source Material, X-Ray Imaging |
| Full Paper |
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