Paper Title:
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
561-564
DOI
10.4028/www.scientific.net/MSF.457-460.561
Citation
J. W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan, "Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC", Materials Science Forum, Vols. 457-460, pp. 561-564, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan
637
Authors: L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, Stanislav B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, Eckhart Fretwurst, G. Lindström, Michael Moll, Ioana Pintilie, N.I. Zamiatin
Abstract:The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been...
217
Authors: N.Y. Garces, E.R. Glaser, W.E. Carlos, Mark A. Fanton
Abstract:We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and...
389
Authors: Koutarou Kawahara, Giovanni Alfieri, Toru Hiyoshi, Gerhard Pensl, Tsunenobu Kimoto
Abstract:The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated...
651
Authors: Mihail Ionescu, Alec Deslandes, Rohan Holmes, Mathew C. Guenette, Inna Karatchevtseva, Gregory R. Lumpkin
Chapter 2: Contributed Papers
Abstract:Silicon carbide (3C-β SiC) samples were irradiated with He ions of energy up to 30 keV and a fluence up to 1016/cm2, to...
810