Paper Title:
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
573-576
DOI
10.4028/www.scientific.net/MSF.457-460.573
Citation
S. Bai, R. P. Devaty, W. J. Choyke, U. Kaiser, G. Wagner, M. F. MacMillan, "Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells", Materials Science Forum, Vols. 457-460, pp. 573-576, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Y. Ding, K.B. Park, J.P. Pelz, A.V. Los, Michael S. Mazzola
1077
Authors: Sandrine Juillaguet, Jean Camassel
Abstract:Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic...
335
Authors: Yeon Suk Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, John W. Steeds
Abstract:We have carried out the growth and basic characterization of isotopically enriched 4HSi 13C crystals. In recent years the growth of 13C...
13
Authors: S. Sanorpim, D. Kaewket, Sukkaneste Tungasmita, R. Katayama, Kentaro Onabe
Abstract:Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6 -...
224
Authors: Anne Henry, Hiroshi Yano, Tomoaki Hatayama
2.1 Fundamental and Material Properties
Abstract:The photoluminescence of the near band gap emission of 10H-SiC is revealed for the first time and detected just below 3.0 eV. The...
269