Paper Title:
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
581-584
DOI
10.4028/www.scientific.net/MSF.457-460.581
Citation
B.J. Skromme, M.K. Mikhov, L. Chen, G. Samson, R. J. Wang, C. H. Li, I. Bhat, "Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 581-584, 2004
Online since
June 2004
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