Paper Title:
Optical Characterization of Full SiC Wafer
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
593-596
DOI
10.4028/www.scientific.net/MSF.457-460.593
Citation
I. El Harrouni, J. M. Bluet, D. Ziane, M. Mermoux, F. Baillet, G. Guillot, "Optical Characterization of Full SiC Wafer", Materials Science Forum, Vols. 457-460, pp. 593-596, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: L. Masarotto, Jean Marie Bluet, I. El Harrouni, Gérard Guillot
349
Authors: Ricardo Reitano, M. Zimbone, Paolo Musumeci, P. Baeri
Abstract:Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC....
373
Authors: Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Peter G. Muzykov, D. Kurt Gaskill, Charles R. Eddy, Tangali S. Sudarshan
Abstract:The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths...
211
Authors: Kęstutis Jarašiūnas, Patrik Ščajev, Vytautas Gudelis, Paul B. Klein, Masashi Kato
Abstract:We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals...
215
Authors: Paul B. Klein
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially...
279