Paper Title:
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
597-600
DOI
10.4028/www.scientific.net/MSF.457-460.597
Citation
A. A. Lebedev, A. M. Strel'chuk, A. N. Kuznetsov, N.S. Savkina, "Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum", Materials Science Forum, Vols. 457-460, pp. 597-600, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Alexey N. Kuznetsov, M. Valakh, V.S. Kiselev, B.N. Romanyuk, Christophe Raynaud, Jean-Pierre Chante, Marie Laure Locatelli
1133
Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
945
Authors: Anatoly M. Strel'chuk, A.V. Mashichev, Alexander A. Lebedev, A.N. Volkova, Konstantinos Zekentes
Abstract:The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was...
1343
Authors: Owen J. Guy, Amador Pérez-Tomás, Michael R. Jennings, Michal Lodzinski, A. Castaing, Philip A. Mawby, James A. Covington, S.P. Wilks, R. Hammond, D. Connolly, S. Jones, J. Hopkins, T. Wilby, N. Rimmer, K. Baker, S. Conway, S. Evans
Abstract:This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low...
443
Authors: Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, Jens Peter Konrath, Sigo Scharnholz, Dominique Planson
Abstract:Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to...
567