Paper Title:
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
621-624
DOI
10.4028/www.scientific.net/MSF.457-460.621
Citation
E. Kurimoto, M. Hangyo, H. Harima, K. Kisoda, T. Nishiguchi, S. Nishino, S. Nakashima, M. Katsuno, N. Ohtani, "Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering", Materials Science Forum, Vols. 457-460, pp. 621-624, 2004
Online since
June 2004
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