Paper Title:
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
625-628
DOI
10.4028/www.scientific.net/MSF.457-460.625
Citation
S. H. Seo, J. H. Park, J. S. Song, M. H. Oh, "Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method", Materials Science Forum, Vols. 457-460, pp. 625-628, 2004
Online since
June 2004
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