Paper Title:
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
629-632
DOI
10.4028/www.scientific.net/MSF.457-460.629
Citation
M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, K. Arai, "Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 629-632, 2004
Online since
June 2004
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