Paper Title:

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 629-632
DOI 10.4028/www.scientific.net/MSF.457-460.629
Citation Mitsuo Okamoto et al., 2004, Materials Science Forum, 457-460, 629
Online since June, 2004
Authors Mitsuo Okamoto, Ryouji Kosugi, Shinichi Nakashima, Kenji Fukuda, Kazuo Arai
Keywords 4H-SiC, Crystallinity, DUV Excitation Raman Spectroscopy, Low Temperature Growth, Microwave Plasma Chemical Vapor Deposition (microwave PCVD), Morphology, Scanning Electron Microscope (SEM)
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