Paper Title:
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
629-632 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.629 |
| Citation |
Mitsuo Okamoto et al., 2004, Materials Science Forum, 457-460, 629 |
| Online since |
June, 2004 |
| Authors |
Mitsuo Okamoto, Ryouji Kosugi, Shinichi Nakashima, Kenji Fukuda, Kazuo Arai |
| Keywords |
4H-SiC, Crystallinity, DUV Excitation Raman Spectroscopy, Low Temperature Growth, Microwave Plasma Chemical Vapor Deposition (microwave PCVD), Morphology, Scanning Electron Microscope (SEM) |
| Price |
US$ 28,- |