Paper Title:
Faceted Growth of SiC Bulk Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
63-66
DOI
10.4028/www.scientific.net/MSF.457-460.63
Citation
I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Y. Karpov, D.K. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Y.A. Vodakov, M.G. Ramm, H. Helava, Y. N. Makarov, "Faceted Growth of SiC Bulk Crystals", Materials Science Forum, Vols. 457-460, pp. 63-66, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker
67
Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
51
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda
Abstract:Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed...
37
Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi
Chapter 1: SiC Bulk Growth
Abstract:Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of...
21