Paper Title:
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
645-648
DOI
10.4028/www.scientific.net/MSF.457-460.645
Citation
R. Weingärtner, P. J. Wellmann, A. Winnacker, "On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 645-648, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Gaurang Patel, M.B. Sureshkumar, Purvi Patel
Chapter 11: Materials Behavior
Abstract:The transmittance, absorbance, and reflectance of PMMA/TiO2 composites, in different weight percentage of TiO2, prepared by a solution cast...
3249
Authors: Rui Zhang, Hong Sheng Zhao, Huan Ming Chen
Chapter 7: Materials Engineering, Chemical Engineering and Materials Processing Technologies
Abstract:The electronic structure and optical properties of wurtzite ZnO nanofilms with different thickness are investigated systematically by using...
2731
Authors: Jian Wu Sun, Valdas Jokubavicius, Lu Gao, Ian Booker, Mattias Jansson, Xin Yu Liu, Jan P. Hofmann, Emiel J.M. Hensen, Margareta K. Linnarsson, P.J. Wellmann, Iñigo Ramiro, Antonio Martí, Rositza Yakimova, Mikael Syväjärvi
4.5 Other Devices (Sensors, Detectors, ...)
Abstract:There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible...
1028