Paper Title:
Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
677-680
DOI
10.4028/www.scientific.net/MSF.457-460.677
Citation
L. Kasamakova-Kolaklieva, L. Storasta, I. G. Ivanov, B. Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski, E. Janzén, "Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 677-680, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki
Abstract:The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations...
201
Authors: Sylvie Contreras, Leszek Konczewicz, Pawel Kwasnicki, Roxana Arvinte, Herve Peyre, Thierry Chassagne, Marcin Zielinski, Maria Kayambaki, Sandrine Juillaguet, Konstantinos Zekentes
2.1 Fundamental and Material Properties
Abstract:In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature...
249