Paper Title:
Free Growth of 4H-SiC by Sublimation Method
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
71-74
DOI
10.4028/www.scientific.net/MSF.457-460.71
Citation
J. M. Dedulle, M. Anikin, M. Pons, E. Blanquet, A. Pisch, R. Madar, C. Bernard, "Free Growth of 4H-SiC by Sublimation Method", Materials Science Forum, Vols. 457-460, pp. 71-74, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shin Ichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai
13
Authors: H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino
71
Authors: Ji Kuan Cheng, Ji Qiang Gao, Jian Feng Yang, Jun Lin Liu, Xian Jiang, Yong Gui Shi
Abstract:The research investigated the mass loss in SiC crystal growth process by analyzing the effects of the content of Si appending in sources...
1558
Authors: Im Gyu Yeo, Tae Woo Lee, Jong Hwi Park, Woo Sung Yang, Heui Bum Ryu, Mi Seon Park, Il Soo Kim, Byoung Chul Shin, Won Jae Lee, Tai Hee Eun, Seung Seok Lee, Myong Chuel Chun
Abstract:Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of...
40
Authors: Yu.N. Makarov, D. Litvin, A. Vasiliev, S. Nagalyuk
1.1 Bulk Growth
Abstract:Recently, the wide bandgap semiconductors, especially silicon carbide (SiC), have become more important due to the unique electrical and...
101