Paper Title:
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
719-722
DOI
10.4028/www.scientific.net/MSF.457-460.719
Citation
Z.G. Herro, M. Bickermann, B. M. Epelbaum, R. Weingärtner, U. Künecke, A. Winnacker, "Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source", Materials Science Forum, Vols. 457-460, pp. 719-722, 2004
Online since
June 2004
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1.1 Bulk Growth
Abstract:The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The...
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