Paper Title:
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
731-734
DOI
10.4028/www.scientific.net/MSF.457-460.731
Citation
J. Mezière, P. Ferret, E. Blanquet, M. Pons, L. Di Cioccio, T. Billon, "Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth", Materials Science Forum, Vols. 457-460, pp. 731-734, 2004
Online since
June 2004
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