Paper Title:
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
735-738
DOI
10.4028/www.scientific.net/MSF.457-460.735
Citation
C. Jacquier, G. Ferro, C. Balloud, M. Zielinski, J. Camassel, E. K. Polychroniadis, J. Stoemenos, F. Cauwet, Y. Monteil, "Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt ", Materials Science Forum, Vols. 457-460, pp. 735-738, 2004
Online since
June 2004
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