Paper Title:
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
751-754
DOI
10.4028/www.scientific.net/MSF.457-460.751
Citation
H. Matsuura, K. Aso, S. Kagamihara, H. Iwata, T. Ishida, K. Nishikawa , "Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 751-754, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hideharu Matsuura, K. Sugiyama, Kimito Nishikawa, T. Nagata, N. Fukunaga
447
Authors: L. Kasamakova-Kolaklieva, L. Storasta, Ivan G. Ivanov, Björn Magnusson, Sylvie Contreras, C. Consejo, Julien Pernot, Marcin Zielinski, Erik Janzén
677
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181