Paper Title:
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
759-762
DOI
10.4028/www.scientific.net/MSF.457-460.759
Citation
M. Zhang, H. McD. Hobgood, M. Treu, P. Pirouz, "Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates", Materials Science Forum, Vols. 457-460, pp. 759-762, 2004
Online since
June 2004
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