Paper Title:
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
771-774
DOI
10.4028/www.scientific.net/MSF.457-460.771
Citation
L. Wang, "Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS", Materials Science Forum, Vols. 457-460, pp. 771-774, 2004
Online since
June 2004
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kenkichiro Kobayashi, Tsutomu Yamazaki, Yuji Hatta, Yasumasa Tomita
79
Authors: V.B. Vykhodets, Tatiana Eugenievna Kurennykh, N.U. Tarenkova
Abstract:Using nuclear microanalysis (NRA) and electron probe microanalysis (EPMA), concentrations of carbon, oxygen, nitrogen, aluminum, and...
707
Authors: Zhu Wang, Ke Dong Bi, Yun Fei Chen
Abstract:A physical model of the bulk-nanochannel-bulk with buffer bathes has been set up in this paper using molecular dynamics (MD) simulation. The...
658
Authors: Carlos Roberto Grandini, Odila Florêncio, Walter José Botta Filho
Chapter 3: Point Defect Relaxations and Diffusion
Abstract:Anelastic relaxation measurements were performed in a Nb-46wt%Ti alloy, in the temperature range of 300 to 700 K, using a torsion pendulum...
92